[SLAC] [SLAC Pubs and Reports]
Generation of Low Emittance Beams Using III-V Semiconductor Photocathodes in an RF Gun
AbstractNormalized rms emittances well below 10-6m (with thermal emittance ignored) are now predicted for a 1-nC, 10-ps, flattop beam using an S-band rf gun. The expected thermal emittance of a Cu cathode excited at 263 nm is shown to be ~0.3 x 10-6m, which is potentially a serious limit on the overall minimum emittance. For GaAs, the photoelectron energy parallel to the emitting surface is now known as a function of the perpendicular energy. By adjusting the vacuum level for the semiconductor, it appears that the thermal emittance can be reduced (compared to Cu) by a factor of 2—even more if the cathode is cooled. The prospects for operating an rf gun with a III-V semiconductor photocathode such as GaAs are summarized.
- slac-pub-8355 (182 KB)
NotesThe PDF version of this document was distilled from a PostScript file most likely created from LaTeX source which used Type 3 fonts. The resultant PDF may be unreadable on the screen at the default viewing magnification (fonts will appear bitmapped, jagged), though the type will be legible at higher magnifications.
Despite the cosmetic problems resulting from the use Type 3 fonts in the original source file, such PDF files print without problems; likewise, the onscreen text is searchable and selectable.
More InformationFull bibliographic data for this document, including its complete author list, is (or soon will be) available from SLAC's SPIRES-HEP Database.
Please report problems with this file to firstname.lastname@example.org. The SLAC preprint inventory is provided by the SLAC Technical Publications Department.
Page generated 04 Apr 2001 @ 15:07 PDT by htmlme.pl