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Highly Efficient Near-Threshold Spin-Polarized Electron Emission from Strained Superlattices


Electron photoemission from strained GaAs/AlxInyGa1-x-y As superlattice with near zero offset at a conduction band was investigated. Low value of the offset was provided by appropriate composition in the strained AlInGaAs layers. After three activations, the Quantum Yield (Y) at the polarization peak was about 0.6%, which corresponds to the best values whenever measured. In the samples with lower Y (0.21%) the polarization of up to 86% was measured, which evidence the validity of the structures for the application in the polarized electron sources.

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