[SLAC] [SLAC Pubs and Reports]
Highly Efficient Near-Threshold Spin-Polarized Electron Emission from Strained Superlattices
AbstractElectron photoemission from strained GaAs/AlxInyGa1-x-y As superlattice with near zero offset at a conduction band was investigated. Low value of the offset was provided by appropriate composition in the strained AlInGaAs layers. After three activations, the Quantum Yield (Y) at the polarization peak was about 0.6%, which corresponds to the best values whenever measured. In the samples with lower Y (0.21%) the polarization of up to 86% was measured, which evidence the validity of the structures for the application in the polarized electron sources.
- slac-pub-7922 (136 KB)
NotesThe PDF version of this document was distilled from a PostScript file most likely created from LaTeX source which used Type 3 fonts. The resultant PDF may be unreadable on the screen at the default viewing magnification (fonts will appear bitmapped, jagged), though the type will be legible at higher magnifications.
Despite the cosmetic problems resulting from the use Type 3 fonts in the original source file, such PDF files print without problems; likewise, the onscreen text is searchable and selectable.
More InformationFull bibliographic data for this document, including its complete author list, is (or soon will be) available from SLAC's SPIRES-HEP Database.
Please report problems with this file to email@example.com. The SLAC preprint inventory is provided by the SLAC Technical Publications Department.
Page generated 04 Apr 2001 @ 15:08 PDT by htmlme.pl