Atomic Hydrogen Cleaning

 

Summary

 

GaAs Bulk stripped by NH4OH (reference)

Date

Procedures

QE(%)

Activation

2002-07-29

heat-cleaning @ 450C; Cs/NF3

6.13

 

2002-07-29

heat-cleaning @ 500C; Cs/NF3

9.66

 

2002-07-30

heat-cleaning @ 550C; Cs/NF3

11.94

 

2002-07-30

heat-cleaning @ 600C; Cs/NF3

12.51

 

 

GaAs Bulk anodized @ 2.5V and stripped by NH4OH (reference)

Date

Procedures

QE(%)

Activation

2002-08-01

heat-cleaning @ 450C; Cs/NF3

4.46

 

2002-08-01

heat-cleaning @ 500C; Cs/NF3

7.42

 

2002-08-02

heat-cleaning @ 550C; Cs/NF3

7.62

 

2002-08-02

heat-cleaning @ 600C; Cs/NF3

11.22

 

 

GaAs Bulk stripped by NH4OH?

Date

Procedures

QE(%)

Activation

2002-08-06

AHC @ 300C for 30 minutes (biased negatively); heat-cleaning @ 450C; Cs/NF3

1.68

 

2002-08-07

heat-cleaning @ 500C; Cs/NF3

2.57

 

2002-08-08

heat-cleaning @ 600C; Cs/NF3

4.79

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-08-09

AHC @ RT for 30 minutes; heat-cleaning @ 450C; Cs/NF3

5.55

 

2002-08-12

AHC @ 305C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

6.99

 

2002-08-20

AHC @ 300C for 55 minutes; heat-cleaning @ 450C; Cs/NF3

6.03

 

2002-08-21

Outgassing overnight @ ~340C; AHC @ 340C; heat-cleaning @ 600C; Cs/NF3

1.05

 

 

Note: The AHC chamber was baked from 08-15 to 08-19.

 

GaAs Bulk degreased only

Date

Procedures

QE(%)

Activation

2002-08-22

heat-cleaning @ 450C; Cs/NF3

0.46

 

2002-08-23

AHC @ 300C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

1.13

 

 

GaAs Bulk degreased only

Date

Procedures

QE(%)

Activation

2002-08-26

heat-cleaning @ 450C; Cs/NF3

0.52

 

2002-08-26

heat-cleaning @ 450C; Cs/NF3

1.13

 

2002-08-27

heat-cleaning @ 450C; Cs/NF3

0.87

 

2002-08-28

AHC @ 343C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

1.55

 

2002-08-29

AHC @ 346C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

9.38

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-09-10

AHC @ 351C for 30 minutes (temperature was much lower due to the interference between RF and digital variac); heat-cleaning @ 450C; Cs/NF3

3.89

 

2002-09-11

AHC @ 355C for 20 minutes; heat-cleaning @ 450C; Cs/NF3

5.36

 

2002-09-12

AHC @ 350C for 25 minutes; heat-cleaning @ 450C; Cs/NF3

1.98

 

2002-09-13

heat-cleaning @ 600C for 1 hours; Cs/NF3

3.99

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-09-16

heat-cleaning @ 450C; Cs/NF3

6.39

 

2002-09-16

heat-cleaning @ 450C; Cs/NF3

8.15

 

2002-09-17

AHC @ 348C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

4.07

 

 

GaAs Bulk degreased only

Date

Procedures

QE(%)

Activation

2002-09-19

Heat-cleaning @ 450C for 60 minutes; AHC @ 346C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

14.37

 

2002-09-20

heat-cleaning @ 450C for 15 minutes; Cs/NF3

12.51

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-09-24

Heat-cleaning @ 450C for 60 minutes; AHC @ 352C for 10 minutes; heat-cleaning @ 450C; Cs/NF3

7.51

 

2002-09-25

AHC @ 351C for 10 minutes; heat-cleaning @ 450C; Cs/NF3

7.40

 

2002-09-25

AHC @ 363C for 20 minutes; heat-cleaning @ 450C; Cs/NF3

1.79

 

2002-09-26

heat-cleaning @ 505C for 2 hours; Cs/NF3

2.60

 

 

GaAs Bulk anodized @ 0.75V; not stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-09-27

Heat-cleaning @ 450C for 30 minutes; AHC @ 355C for 60 minutes; heat-cleaning @ 450C; Cs/NF3

1.25

 

2002-10-03

AHC @ 353C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

1.44

 

 

GaAs Bulk stripped by NH4OH; 22 hours of air exposure

Date

Procedures

QE(%)

Activation

2002-10-02

Heat-cleaning @ 450C for 20 minutes; AHC @ 306C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

1.88

 

2002-10-03

AHC @ 310C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

1.75

 

 

GaAs Bulk stripped by NH4OH; 2 days of air exposure

Date

Procedures

QE(%)

Activation

2002-10-17

Heat-cleaning @ 450C for 15 minutes; AHC @ 337C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

1.84

 

2002-10-17

AHC @ 349C for 30 minutes; heat-cleaning @ 450C; Cs/NF3

1.88

 

 

GaAs Bulk stripped by NH4OH; 20 hours of air exposure

Date

Procedures

QE(%)

Activation

2002-10-22

Heat-cleaning @ 450C for 15 minutes; AHC @ 300C for 10 minutes; heat-cleaning @ 450C; Cs/NF3

3.17

 

2002-10-23

AHC @ 300C for 10 minutes; heat-cleaning @ 450C; Cs/NF3

2.05

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-10-24

AHC @ 300C for 2 minutes; heat-cleaning @ 450C; Cs/NF3

11.16

 

2002-10-25

AHC @ 300C for 2 minutes; heat-cleaning @ 450C; Cs/NF3

7.56

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-10-28

AHC @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

11.32

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-10-29

AHC @ 300C for 4 minutes; heat-cleaning @ 450C; Cs/NF3

8.35

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-10-30

AHC @ 300C for 2 minutes; negatively biased @ 44~88V; heat-cleaning @ 450C; Cs/NF3

2.91

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-10-31

AHC @ 300C for 2.5 minutes; positively biased @ 44~88V; heat-cleaning @ 450C; Cs/NF3

7.02

 

 

GaAs Bulk stripped by NH4OH; 2 days of air exposure

Date

Procedures

QE(%)

Activation

2002-11-01

AHC @ 300C for 5.5 minutes; heat-cleaning @ 450C; Cs/NF3

5.62

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-04

AHC @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

11.17

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-05

Biased positively @ 44~88V; AHC @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

8.23

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-06

Biased negatively with magnetic field; AHC @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

13.82

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-07

AHC @ 300C for 1 minutes with magnetic field; heat-cleaning @ 450C; Cs/NF3

13.62

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-08

Biased at -44V; AHC @ 300C for 4 minutes with magnetic field; heat-cleaning @ 450C; Cs/NF3

10.99

 

 

Note: cathodes were cut from a new wafer

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-11

AHC @ 300C for 10 minutes with magnetic field; heat-cleaning @ 450C; Cs/NF3

10.50

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-12

Heat-cleaning @ 450C; Cs/NF3

5.83

 

2002-11-12

Heat-cleaning @ 600C; Cs/NF3

13.98

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-13

AHC @ 300C for 30 seconds with magnetic field; heat-cleaning @ 450C; Cs/NF3

14.91

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-14

AHC @ 300C for 15 seconds with magnetic field; heat-cleaning @ 450C; Cs/NF3

15.22

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-15

Biased at -88V; AHC @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

8.51

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-18

AHC @ 300C for 2 seconds with magnetic field; heat-cleaning @ 450C; Cs/NF3

12.29

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-19

Annealed in H2 (~4e-5torr) @ 300C for 1 minutes; heat-cleaning @ 450C; Cs/NF3

7.77

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-20

AHC @ 300C for 15 seconds; heat-cleaning @ 450C; Cs/NF3

13.46

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-21

Biased at -88V; AHC @ 300C for 15 seconds; heat-cleaning @ 450C; Cs/NF3

11.59

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-22

AHC @ 300C for 10 minutes; heat-cleaning @ 450C; Cs/NF3

7.39

 

 

GaAs Bulk stripped by NH4OH

Date

Procedures

QE(%)

Activation

2002-11-25

AHC @ 300C for 15 seconds with magnet; 10 minutes of air exposure; heat-cleaning @ 450C; Cs/NF3

4.23

 

 

MO5-5997 Standard Strained GaAs anodized and stripped by NH4OH; polarization test

Date

Procedures

QE(%)

Activation

2002-11-26

Heat-cleaning @ 570C; Cs/NF3

6.15

 

2002-11-27

AHC @ 300C for 15 minutes; heat-cleaning @ 570C; Cs/NF3

5.67

 

2002-12-02

AHC @ 300C for 15 minutes; heat-cleaning @ 570C; Cs/NF3

5.80

 

2002-12-03

AHC @ 300C for 15 minutes; heat-cleaning @ 570C; Cs/NF3

6.40

 

2002-12-04

AHC @ 300C for 15 minutes; heat-cleaning @ 570C; Cs/NF3

5.83

 

 

MO5-5997 Standard Strained GaAs anodized and stripped by NH4OH; polarization test

Date

Procedures

QE(%)

Activation

2002-12-06

AHC @ 300C for 15 seconds with magnet; heat-cleaning @ 450C; Cs/NF3

8.28

 

 

GaAs Bulk stripped by NH4OH; lifetime test and QE test

Date

Procedures

QE(%)

Activation

2002-12-09

AHC @ 300C for 15 seconds with magnet; heat-cleaning @ 450C; Cs/NF3

14.34

 

 

GaAs Bulk etched by 4:1:1 solution for 10 seconds

Date

Procedures

QE(%)

Activation

2002-12-17

Heat-cleaning @ 450C; Cs/NF3

7.94

 

2002-12-17

Heat-cleaning @ 570C; Cs/NF3

10.56

 

 

GaAs Bulk etched by 4:1:1 solution for 10 seconds

Date

Procedures

QE(%)

Activation

2002-12-18

AHC @ 300C for 15 seconds with magnet; heat-cleaning @ 450C; Cs/NF3

9.72