Cathode list (updated on 2009-12-14)

 

Cathode No.

Date Received

Structure

#

Comments

CTL

GTL

More Data

MO5-5868

2001-05-10

High-gradient-doped GaAsP

0

E-158; No charge limit;

2001-06-01

2001-07-27p

2001-08-01p

2001-08-01c

2001-08-23fr

2001-08-23yr

2001-08-23yd

2001-08-23c

2002-04-26p

2002-04-30p

E158

MO5-5997

2001-06-10

Standard strained GaAs

2

 

2001-07-06

AHC1,AHC2

 

 

MO5-6005

2001-06-10

High-gradient-doped GaAs

2

Lower QE due to GaAs as active layer; maybe no charge limit.

2001-08-09

 

 

MO5-6007

2001-06-10

High-gradient-doped GaAsP

0

Its active layer is too thick. Low P.

2001-08-15

2001-12-07

2001-12-11

2001-12-14

activation test

SIMS1 SIMS2

MO5-6258

2001-06-10

High-gradient-doped GaAsP

2

OK QE and P in CTL; Low P in GTL; as backup in CID loadlock for E158 Run 1; removed from CID loadlock on 5/6/03

2001-12-18

2002-02-25

2002-02-28

 

SVT-3481

2001-11-15

Single strained GaAsP

1

First cathode from SVT

2001-11-26

2001-11-20

2001-11-27

 

SVT-3682

2001-12-21

High-gradient-doped superlattice (GaAs/GaAsP 30/30/0.36)

0

A small test piece

2002-01-07

2003-01-27

 

x-ray

SVT-3810

2002-03-05

High-gradient-doped Superlattice (GaAs/GaAsP 40/40/0.36)

2

Low QE

2002-03-08

 

 

SVT-3813

2002-03-05

High-gradient-doped Superlattice (GaAs/GaAsP 40/30/0.36)

1

Low QE; Charge limit

2002-03-11

2002-03-27

2002-04-22p

 

SVT-3814

2002-03-05

High-gradient-doped Superlattice (GaAs/GaAsP 50/30/0.36)

2

Low QE

2002-03-13

Compared

 

 

SVT-3982

2002-05-20

High-gradient-doped GaAsP

0

OK QE in CTL; charge limit in GTL

Heat-cleaning test between 5/14/03 and 5/15/03

2002-06-04

2002-06-21

2002-06-27

QE Asymmetry

SVT-3984

2002-05-20

High-gradient-doped Superlattice (GaAs/GaAsP 30/30/0.36)

0

OK P; no charge limit in GTL (up to 60uJ)

2002-07-10

2002-07-11

 

 

SVT-3985

2002-05-20

High-gradient-doped Superlattice (GaAs/GaAsP 40/40/0.36)

 

Hazed surface. Never tested.

 

 

 

QT1669A

2002-09-09

Strain-compensated SL In0.16Al0.14Ga0.7As(40)

/GaAs0.75P0.25(40), 8 periods

0

Russian cathode, Zn-doped, Sheffield

2002-12-12

 

 

QT1669B

2002-09-09

Strain-compensated SL In0.16Al0.14Ga0.7As(40)

/GaAs0.75P0.25(40), 12 periods

0

Russian cathode, Zn-doped, Sheffield

2002-12-13

 

 

SVT-4182

2003-01-06

High-gradient-doped Superlattice (GaAs/GaAsP 30/30/0.36)

0

Be-doped. P growth condition changed; As capping attempted.

2003-02-10

2003-03-20p

2003-03-20f

QE Asymmetry

QT1751A

2003-02-21

Strain-compensated SL In0.18Al0.18Ga0.64As(50)

/GaAs0.66P0.34(55), 12 periods

1

Zn-doped; low P and QE, Sheffield

2003-03-07,

compared

 

 

QT1751B

2003-02-21

Strain-compensated SL In0.16Al0.16Ga0.68As(55)

/GaAs0.68P0.32(55), 14 periods

1

Zn-doped; very low P, Sheffield

2003-03-13

 

 

QT1669A

2003-03-05

Strain-compensated SL In0.16Al0.14Ga0.7As(40)

/GaAs0.75P0.25(40), 8 periods

 

Russian cathode, Zn-doped, used, Sheffield

 

 

 

QT1669B

2002-03-05

Strain-compensated SL In0.16Al0.14Ga0.7As(40)

/GaAs0.75P0.25(40), 12 periods

 

Russian cathode, Zn-doped, used, Sheffield

 

 

 

#5-337

2003-03-05

SL In0.16Al0.20Ga0.64As(50)

/Al0.28Ga0.72As(40), 15 periods

1

Ioffe, Be-doped

Show surface charge limit when heat-cleaned up to 800C

2003-03-20

2003-03-24

2003-06-11c

2003-06-20c

2003-06-20p

2003-06-20f

2003-06-26c

2003-06-26f

QE Asymmetry

#5-338

2003-03-05

SL In0.20Al0.20Ga0.60As(45)

/Al0.30Ga0.70As(45), 14 periods

1

Ioffe, Be-doped. Heat-cleaned at 750C twice. Slightly charge-limited

2003-04-18

2003-08-29f

2003-08-29c

2003-08-29p

QE Asymmetry

SVT-4246

2003-03-20

High-gradient-doped Superlattice (GaAs/GaAsP 40/40/0.36), 12 periods

0

Be-doped. Show no charge limit in GTL; install in CID loadlock on 5/6/03; show charge limit after one activation.

Moved to puck tray on 5/16/03.

2003-03-26

2003-04-02

 

QE Asymmetry

2003-05-08 CID

SVT-4249

2003-03-20

High-gradient-doped Superlattice (GaAs/GaAsP 40/30/0.36), 14 periods

0

Be-doped. No charge limit; P~83% @780nm; install in CID loadlock on 5/6/03 as backup.

Moved into gun on 5/16/03.

Activated at lower temperature.

2003-03-31

2003-04-08f

2003-04-09c

2003-04-14p

2003-04-18qep

QE Asymmetry

SVT-4252

2003-03-20

High-gradient-doped Superlattice (GaAs/GaAsP 50/30/0.36), 12 periods

0

Be-doped. Charge limit @ 780nm?

Heat-cleaning test between 5/20/03~5/30/03

2003-04-01

2003-04-24p

2003-05-30c

2003-05-30p

QE Asymmetry

#5-362

2003-04-10

SL In0.18Al0.14Ga0.68As(46)

/Al0.36Ga0.64As(52), 10.5 periods

1

Ioffe, Be-doped; low QE and short lifetime; very low P

2003-04-22

 

QE Asymmetry

#5-363

2003-04-10

SL In0.18Al0.16Ga0.66As(40)

/Al0.40Ga0.60As(46), 12.5 periods

1

Ioffe, Be-doped; very low P

2003-04-25

 

QE Asymmetry

vs. wavelength

ST-219

2003-06-02

SL GaAs0.79P0.21(40)

/GaAs 0.94P0.06(40), 10 periods

0

Novosibirsk, Be-doped. Very high QE; very low P

2003-06-04

 

QE Asymmetry

ST-221

2003-06-02

SL GaAs0.75P0.25(40)

/GaAs 0.94P0.06(40), 10 periods

0

Novosibirsk, Be-doped. Upside down

2003-06-09

 

 

ST-229

2003-06-02

SL GaAs0.72P0.28(40)

/GaAs 0.94P0.06(40), 10 periods

0

Novosibirsk, Be-doped. Very high QE; low P

2003-06-11

 

QE Asymmetry

SVT-4350

2003-07-17

SL GaAs0.70P0.30(40)

/GaAs(40), 12 periods

1

Be-doped. Charge limit after two 750C heat-cleaning

2003-07-22

2003-08-13p

2003-08-14c

2003-08-14f

QE Asymmetry

pmap

SVT-4351

2003-07-17

SL GaAs0.60P0.40(40)

/GaAs(40), 12 periods

1

Be-doped. Heat-cleaned at 720C and 750C.

2003-07-18

2003-08-22p

2003-08-22c

2003-08-22f

2003-08-25c

QE Asymmetry

pmap

SVT-4353

2003-07-17

SL GaAs0.64P0.36(40)

/GaAs(40), 9 periods

1

Be-doped. Heat-cleaned @725C once. No surface charge limit.

2003-07-24

2003-09-09p

2003-09-09f

2003-09-09c

2003-09-10c

2003-09-22p

2003-09-25c

2003-09-29p

QE Asymmetry

pmap

SVT-4355

2003-07-17

SL GaAs0.64P0.36(40)

/GaAs(40), 15 periods

1

Be-doped.

2003-07-28

2003-10-03p

2003-10-03f

2003-10-10f

2003-10-10c

QE Asymmetry

pmap

QT-1817

2002-10-27

Strain-compensated SL In0.16(Al0.14Ga0.86)0.84As

/GaAs0.66P0.34, 70, 12 periods

1

Sheffield; C-doped in buffer, Zn-doped in well, and no doping in barrier. Very low QE

2003-10-31

 

structure

QT-1822

2002-10-27

Strain-compensated SL In0.16(Al0.13Ga0.87)0.84As

/GaAs0.93P0.07, 65, 30 periods

1

Sheffield; C-doped in buffer, Zn-doped in well, and no doping in barrier

2003-11-04

 

structure

QT-1822A

2002-10-27

Strain-compensated SL In0.16(Al0.14Ga0.86)0.84As

/GaAs0.93P0.07, 65, 20 periods

1

Sheffield; C-doped in buffer, Zn-doped in well, and no doping in barrier

2003-11-06

 

structure

SVT-4603

2003-12-03

SL GaAs0.75P0.25(40)

/GaAs(40), 12 periods

2

Be-doped.

2003-12-04

 

QE Asymmetry

SVT-4605

2003-12-03

SL GaAs0.64P0.36(40)

/GaAs(40), 20 periods

2

Be-doped.

2003-12-05

 

QE Asymmetry

SVT-4606

2003-12-03

SL GaAs0.64P0.36(40)

/GaAs(40), 30 periods

2

Be-doped.

2003-12-15

 

QE Asymmetry

QT-1836A

2003-12-16

Strain-compensated SL In0.18Al0.12Ga0.70As (50)

/GaAs0.85P0.15 (40), 20 periods

 

P~79%

2004-01-06

 

structure1, structure2,

QE Asymmetry

QT-1836B

2003-12-16

Strain-compensated SL In0.18Al0.12Ga0.70As (40)

/GaAs0.85P0.15 (40), 20 periods

 

P~80%

2004-01-07

 

structure1, structure2,

QE Asymmetry

QT-1836C

2003-12-16

Strain-compensated SL In0.18Al0.14Ga0.68As (50)

/GaAs0.85P0.15 (40), 20 periods

 

P~85%

2004-01-08

 

structure1, structure2,

QE Asymmetry

QT-1836D

2003-12-16

Strain-compensated SL In0.18Al0.14Ga0.68As (40)

/GaAs0.80P0.20 (40), 20 periods

 

P~76%

2004-01-09,

comparison

 

structure1, structure2,

QE Asymmetry

#5-635

2004-01-09

SL In0.16Al0.18Ga0.66As(35)

/Al0.36Ga0.64As(35), 14 periods

0

12mmx12mm

2004-01-16

 

 

structure, result

#5-636

2004-01-09

SL In0.16Al0.18Ga0.66As(35)

/Al0.32Ga0.68As(35), 14 periods

0

12mmx12mm

2004-01-21

2004-01-26

2004-01-28

comparison

 

structure, result,

QE Asymmetry

SVT-4948

2004-04-28

SL GaAs0.64P0.36(30)

/GaAs(60)

2

Be-doped. 84.4% @ 800 nm

2004-05-07

 

QE Asymmetry

SVT-4949

2004-04-28

SL GaAs0.64P0.36(40)

/GaAs(30)

2

Be-doped. 83% @ 760nm

2004-05-11

 

QE Asymmetry

SVT-4950

2004-04-28

SL GaAs0.64P0.36(40)

/GaAs(50)

2

Be-doped. 84% @ 800nm

2004-05-13

 

QE Asymmetry

SVT-4951

2004-04-28

SL GaAs0.64P0.36(40)

/GaAs(60)

2

Be-doped. 85% @ 800nm

2004-05-18

 

QE Asymmetry

QT-1890 UP

2004-06-30

Strain-compensated SL In0.18Al0.13Ga0.69As (40)

/Ga0.83P0.17 (60), 20 periods with DBR

0

 

summary

 

Map

result

QT-1890 Down

2004-06-30

Strain-compensated SL In0.18Al0.13Ga0.69As (40)

/Ga0.83P0.17 (60), 20 periods

without DBR

0

 

summary

 

 

#6-035

2004-10-07

Low conduction band barrier, S.I. substrate, structure

0

As-capped

comparison

 

x-ray

#6-037

2004-10-07

Low conduction band barrier, S.I. substrate, structure

0

As-capped

comparison

 

x-ray

#6-041

2004-10-07

Highly strained SL, S.I. substrate, structure

0

As-capped; activated with Ta cap; low QE

2005-01-24

 

x-ray

#6-042

2004-10-07

Highly strained SL, S.I. substrate, structure

0

Very thick As-capped; no successful activations

 

 

x-ray

SVT-5382

2004-12-16

SL GaAs0.64P0.36(30)

/GaAs(30)

 

As-Capped

comparison

 

 

SVT-5384

2004-12-16

SL GaAs0.64P0.36(40)

/GaAs(40)

 

As-Capped

 

 

 

SVT-5387

2004-12-16

SL GaAs0.64P0.36(40)

/GaAs(30)

 

As-Capped

 

 

 

SVT-733-5

2009-11-11

SL GaAs0.64P0.36(30)

/GaAs(40)

 

GaAs cap doped to 5x10^19/cc

2009-11-20

 

 

SVT-733-6

2009-11-11

SL GaAs0.64P0.36(30)

/GaAs(40)

 

GaAs cap doped to 5x10^18/cc

2009-11-25

 

 

SVT-733-7

2009-11-11

SL GaAs0.64P0.36(30)

/GaAs(40)

 

GaAs cap doped to 1x10^19/cc

2009-12-02

 

 

SVT-733-8

2009-11-11

SL GaAs0.64P0.36(30)

/GaAs(40)

 

GaAs cap doped to 2x10^19/cc

2009-12-07

 

 

 

 

3/27/2003: New channeltron voltages

6/10/2003: New preamp cable

7/18/2003: Mott high voltage power supply was replaced

7/24/2003: Mott high voltage was increased from 19.65kV to 19.75kV

8/22/2003: New Pockel cell alignment in GTL

9/05/2003: NEG pump on Cryo loadlock activated