D.R. SWENSON, K. SAADATMAND, I. ZEINOUN (Eaton Corporation)
Optimizing transmission of beam in an ion implanter used for the manufacture of semiconductor devices leads to improved source lifetime, better reliability, and reduces contamination. With this goal, we are studying the emittance of the beam produced by the ELS-PIG ion source for beams from a BF3 plasma extracted at 90 kV with currents as high as 50 mA. The 4-dimensional emittance is measured using a unique pepperpot emittance gear. We have studied the effect on emittance of the plasma emission aperture dimensions, the extraction gap length, the extracted current and other parameters.
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