FUMIHIKO TAMURA*, SAMI G. TANTAWI** (SLAC)
We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. There are two designs of the switch configuration. Both designs consist of two 3dB hybrids and active modules. In the first design, the module is composed of a cascaded active phase shifter. In the second design, the module uses arrays of SPST (Single Pole Single Throw) switches. The active elements of the cascaded phase shifter and the SPST switches have similar design. Each active element consists of symmetrical three-port tee-junctions and an active waveguide window in the symmetrical arm of the tee-junction. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.
* Also with Department of Physics, Faculty of Science, University of Tokyo, Tokyo, Japan. F. Tamura is a JSPS Research Fellow.
** Also with Electrical Communications and Electronics Department, Cairo University, Giza, Egypt.
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